I guess the obvious question first is why. But...I guess you realize that you will need more than just a FET with the capsule, unless it is an electret type. The other high impedance components, like the capsule coupling C, high-meg bias resistors etc. should all be in the immediate vicinity of the capsule.
Vishay/Siliconix still make a few JFETs in metal cases, including the 2N4416A, which has the minor advantage of the case being isolated so it will act as a shield. I don't know how well-made they are anymore, since they long ago abandoned diffusion-based processing in favor of ion implantation and annealing. Why do you want a metal case? I suspect the good Toshiba parts in plastic would outperform, based on their typical low gate currents. Note that the shot noise in 50pA of gate leakage is about equivalent to the current noise in a 1Gohm resistor. Good 4416's used to be about 1pA at relatively low drain-gate voltage.
I'll defer to PRR on the question of max. levels---although it all depends on how much SPL you bring to bear.