iampoor1
Well-known member
Thanks guys, I think this has cleared up all of my questions. I deeply appreciate all of you!
iampoor1 said:Thanks guys, I think this has cleared up all of my questions. I deeply appreciate all of you!
The document is in reply #8 above; no mention is made of how a pad should be designed. The installer is supposed to know.nielsk said:It is likely if you consult the Gates literature for the module it will have detailed instructions for input attenuation pad implementation
GREETINGS!!! I realize that I am over 3-years late coming to this particular party, but circumstances on my end only have taken place within the last couple of days that would eventually lead me here anyway. So, I don't know if my contribution will make any difference and/or even matter!!! But, anyway.....Hi Nathan, not sure if I sent you this doc with the preamps. Sorry if I forgot to. Anyhow, the pre has a max input level of -40 and max out of +5. Designed to go to a 600 ohm Daven attenuator and then to a program amp. A pad on the input and a good output stage would make it much more useful.
This clearly indicates this manual was written at a time where silicon transistors were not yet there, but rather the older germanium types, that were almost exclusively PNP types at the beginning.I also found it quite surprising when I came across this "NOTE" within the documentation: "REMEMBER - In transistor circuitry B+ is ground, therefore, capacitors have the positive side connected to ground". Who in the heck dreamt that up??? Does everything really need to be connected to a power-supply "backwards" in order to operate? (i.e. +30VDC from the power-supply = M6034 GND and "GND" from the power-supply = "M6034 -30VDC"?). Confusing!!!
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