I don't necessarily agree. In order to capture kick drum, you need first to address the level problem.
You have three solutions, for about 20dB attenuation:
- Brute force: put a 470-680pF capacitor in parallels with the FET input
- Chande to a charge amp: put a 68-100pF NFB capacitor between drain and gate of the FET
- Decrease bias voltage: choose a different tap on the voltage multiplier and/or use a voltage divider
I would opt for the latter.
Once the level issue is fixed, you may find that a HPF (bass-cut) is not mandatory, or can be applied later in the chain.
It may be counter intuitive, but there is not much proximity effect in a kick drum.
Proximity effect happens with point sources that generate spherical soundwaves.
A kick drum, because of the size and shape of its emitting source, generates almost flat soundwaves, which result in no proximity efffects.