your math seems accurate, the random call to authority (no offense to Douglas Self) seems arbitrary.25mA is WAY too low. You need around 26mV across the emitter resistor of each transistor to get optimum "Class B" according to Mr Self (most of us call that Class AB). If you use 0.22R emitter resistors then:
26mV/220mOhm = 118mA
I recall class AB amps using lateral mosfets being biased up above 100mA quiescent to enjoy the positive temperature coefficient region of those particular power devices for stable thermal behavior. The high class A current coincidentally improved crossover distortion while the high gate capacitance was not easy to slew.
the old demon slew limiting/transient intermodulation distortion ... Marshal Leach published an interesting AES paper showing how to avoid saturating the input LTP in ampsKind of.
It is actually a circuit that prevents the "non-active" transistor from cutting off
yupand provides a stable, thermally independent bias.
As a result essentially all of the common "Class AB" distortion mechanisms EXCEPT GM doubling/halving (doubling if you from a Class B view, halving if you view from a Class A view) which is generally amenable to using NFB to correct.
It is a clever little circuit.
I have something simpler that does the same job, but that's beside the point.
Thor
I stand by my observation that typical bipolar amp class A bias is closer to 25 mA*** than 120 mA. That said I have been out of the amplifier product management/design trenches for decades.
JR
**** this is per device current, so large power amps with multiple devices in parallel, and high voltage power rails can result in significant no load idle power dissipation. Preventing thermal runaway from this no load heat involves much design effort. I've seen amps with marginal thermal stability literally self destruct (not a pun) with no load.