Those 1uF caps should really be 100uF.this is the idea about MS matrix....
really don t know if i m missing something or to complex to achieve
i d like to realize something simple to implement
Of course! It was standard on thousands of mixers in the 80's and 90's.has someone already tried this design?
Would it be worth it to look at using transistors as diodes in those positions?As for the diodes I´d suggest 1N4153. They are less noisy than 1N4148 in a diode bridge compressor.
https://toshiba.semicon-storage.com...ors are,tenth the required collector current.Something like this?Would it be worth it to look at using transistors as diodes in those positions?
What do you reckon in their parameters make them less noisy?As for the diodes I´d suggest 1N4153. They are less noisy than 1N4148 in a diode bridge compressor.
The intrinsic dynamic resistance of a PN junction is 26.10-3/Id, so all diodes should be more or less equal. The differences are essentially in the spreading resistance, which is the sum of all the parasitic resistances, and capacitance. This resistance is usually quite low. For a1N4148, the effect of it appears at about 100mA, where the dynamic resistance is about 0.25 ohm., very far away from the typical operation area in a diode compressor.I m not so knoleged but replacing diodes means having a different Vca, and so a different machine... Isn t it?
hi Abbey road,The intrinsic dynamic resistance of a PN junction is 26.10-3/Id, so all diodes should be more or less equal. The differences are essentially in the spreading resistance, which is the sum of all the parasitic resistances, and capacitance. This resistance is usually quite low. For a1N4148, the effect of it appears at about 100mA, where the dynamic resistance is about 0.25 ohm., very far away from the typical operation area in a diode compressor.
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