The JFET 2SK58 from the above circuit has En of about 2nV/sqrtHz, the JFET uPA68H from the lower circuit has En approximately 1.3nV/sqrtHz so they are obviously not far from your set target.Most often, DOA's are considered low noise when their EIN density is about 3-5 nV/sqrtHz and their OSI about 5-10kohms. It seems very much the case here (although the OSI might well be much higher).
For a mic booster, the targetted noise voltage density is about 1nV/sqrtHz.
I believe the first commonly available FET's capable of such performance were the 2SK170 and its complementary (2SJ74?).
You're probably right surmising these were available at a time mic boosters were not deemed necessary/useful.All of these transistors were readily available at the time Sony, NEC and Toshiba produced them.
One may wonder why super low-noise devices such as LM394 and 2SB737 have been discontinued without replacement.
They went EOL because customers stopped buying them in enough quantity to justify making and selling them.You're probably right surmising these were available at a time mic boosters were not deemed necessary/useful.
I suspect most of them were EOL before anybody began to think about boosting low level mics.
One may wonder why super low-noise devices such as LM394 and 2SB737 have been discontinued without replacement.
The AS394/194 exists. I've been using them in my SSL builds.One may wonder why super low-noise devices such as LM394 and 2SB737 have been discontinued without replacement.
One may wonder why super low-noise devices such as LM394 and 2SB737 have been discontinued without replacement.
What I meant is their original developer/manufacturer have abandoned them without descendants.The AS394/194 exists. I've been using them in my SSL builds.
I don't remember this one. I should, since I've been the neutrik distributor in the 80's and 90's...Using a booster is not such a new idea. The picture shows a Neutrik booster at least 30 years old, which was delivered with a 333x measuring set.
They seem to be in the same category as ZTX851/951. Medium power transistors where low noise is a collateral of large geometry. Clearly, the manufacturer is not interested in attracting the "low-noise crowd". Compare to Toshiba who proudly bragged about the 2 ohm Rbb' of 2SB737.As far as bipolar transistors are concerned, nowadays the low Rbb/low noise pair ZXTN2018/ZXTP2027 and the low noise pair 2SA1162/2SC2712 which has a higher Rbb can often be seen in microphone preamps.
I used to buy my 2sb737s from ROHM, and they bought the tiny Japanese company that originally developed them.They seem to be in the same category as ZTX851/951. Medium power transistors where low noise is a collateral of large geometry. Clearly, the manufacturer is not interested in attracting the "low-noise crowd". Compare to Toshiba who proudly bragged about the 2 ohm Rbb' of 2SB737.
Bipolar, 2x BC517 darlingtonI don't remember this one. I should, since I've been the neutrik distributor in the 80's and 90's...
Was it bipolar or FET?
Darlingtons are not generally low-noise. Not a factor for most acoustic measurements.Bipolar, 2x BC517 darlington
+ 1xLM385 (2.5V VS) + 1xLM334 (CS)
For sure. I used this booster a few times to amplify the signal from the selfpowered accelerometer when I was doing some measurements on the speakers. And IIRC, we only used it once in the recording studio to amplify the signal from an 8" speaker playing the mic in front of a big kick drum.Darlingtons are not generally low-noise. Not a factor for most acoustic measurements.
That would be nice.I should crack them again and see what’s what.
Looks like the "newer" cascode schematic. I think it's too bad not using the FET's in parallels, which would decrease noise as well as solving the other problems.A pair of LSK389 dual JFETs and a smattering of supporting components.
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