This goes along with the question I asked in the other thread, where member jensenmann recommended 1N4153, on account it was less noisy.Would 1N4448 offer any advantage here ?
What are the factors that determine noise in a diode bridge compressor?
What are the differences between low-power signal diodes? Actually not much that could explain noise differences. Here we talk about silicon (excluding germanium) non-Schottky non-zener diodes. They may have different reverse breakdown voltage (always much higher than the voltages in a bridge compressor), different capacitance (negligible in any case), but for the rest, they all have the same basic I/V curve and the same junction potential of about 0.7V. They also may have a different series resistance, but it is so low (typically less than 1 ohm) that it would make a difference only at very high attenuation, and have zero consequence on noise.
The parameters that can influence noise is the I/V curve. It is supposed to be the same perfect exponential for all diodes. However, due to different processes, the slope of the I/V curve can be more or less steep. This difference is known as the ideality factor.
Noise in a diode attenuator is a compromise between noise and distortion.
It would make sense that the "flattest" I/V curves resulted in the capacity of operating at higher audio level, thus reducing relative noise.
Unfortunately, AFAIK, datasheets do not specify the ideality factor. It has to be deduced from graphs.
So far, comparing the datasheets of 1N4153 and 1N4148, I can't detect a significant difference.
I think experimentation is the key.
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